Photopatternable High-k Fluoropolymer Dielectrics Bearing Pendent Azido Groups

16 Hafnium - based High - k Gate Dielectrics

Scaling of silicon dioxide dielectrics has once been viewed as an effective approach to enhance transistor performance in complementary metal-oxide semiconductor (C-MOS) technologies as predicted by Moore’s law [1]. Thus, in the past few decades, reduction in the thickness of silicon dioxide gate dielectrics has enabled increased numbers of transistors per chip with enhanced circuit functionali...

High-K dielectrics for the gate stack

This article gives an overview of recent developments in the search for the next-generation dielectric for the complementary metal-oxide semiconductor gate stack. After introducing the main quantities of interest, the paper concentrates on a figure of merit that connects two main properties of the gate stack, namely, the leakage current and the capacitance. This is done for single layers as wel...

Hafnium-based High-k Gate Dielectrics

ALD of High-k Dielectrics on Suspended Functionalized SWNTs

Conformal atomic layer deposition ~ALD! on as-grown suspended single-walled carbon nanotubes ~SWNTs! is not possible due to the inertness of ALD precursor molecules to the SWNT surface. Here, we present a functionalization technique that makes SWNTs reactive with ALD precursors, and deposit high-k oxides ~Al2O3 and HfO2! onto the nanotubes to illustrate this method. Reactivity of the precursors...

Dielectric Breakdown Characteristics of Stacked High-k Dielectrics

Dielectric breakdown characteristics of high-k dielectric have been intensively studied to develop a lifetime extrapolation model for device with metal/high-k gate stacks. Majority of prior works treated the high-k dielectric as a single layer dielectric like thermally grown SiO2 while the actual structure of high-k dielectric consists of two layers (high-k layer stacked on interfacial SiO2 lik...